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  october 2008 rev 2 1/18 18 stb14nm65n, STF14NM65N sti14nm65n,stp14nm65n,stw14nm65n n-channel 650 v, 0.33 ? , 12 a mdmesh? ii power mosfet to-220, to-220fp, d 2 pak, i 2 pak, to-247 features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description this series of devices is designed using the second generation of mdmesh? technology. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on- resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram type v dss (@t j max) r ds(on) max i d sti14nm65n 710 v < 0.38 ? 12 a stb14nm65n 710 v < 0.38 ? 12 a STF14NM65N 710 v < 0.38 ? 12 a (1) 1. limited only by maximum temperature allowed stp14nm65n 710 v < 0.38 ? 12 a stw14nm65n 710 v < 0.38 ? 12 a to-220 to-220fp to-247 i2pak 1 2 3 1 2 3 1 2 3 1 2 3 1 3 d2pak table 1. device summary order codes marking package packaging sti14nm65n 14nm65n i2pak tube stb14nm65n 14nm65n d2pak tape and reel STF14NM65N 14nm65n to-220fp tube stp14nm65n 14nm65n to-220 tube stw14nm65n 14nm65n to-247 tube www.st.com
contents stb/f/i/p/w14nm65n 2/18 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
stb/f/i/p/w14nm65n electrical ratings 3/18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220, to-247 d2pak, i2pak to-220fp v ds drain-source voltage (v gs =0) 650 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 12 12 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 7.6 7.6 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 48 48 (1) a p tot total dissipation at t c = 25 c 125 30 w dv/dt (3) 3. i sd 12 a, di/dt 400 a/s, v dd =80% v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) -- 2500 v t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220 i2pak d2pak to-247 to-220fp r thj-case thermal resistance junction-case max 14.2c/w r thj-amb thermal resistance junction-amb max 62.5 -- 50 62.5 c/w r thj-pcb thermal resistance junction-pcb max -- -- 30 -- -- c/w t l maximum lead temperature for soldering purposes 300 c table 4. avalanche characteristics symbol parameter max value unit i as avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 3a e as single pulse avalanche energy (starting t j =25 c, i d =i as , v dd = 50 v) 300 mj
electrical characteristics stb/f/i/p/w14nm65n 4/18 2 electrical characteristics (t case =25c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v dv/dt (1) 1. characteristic value at turn off on inductive load drain source voltage slope v dd = 520 v, i d =12 a, v gs =10 v 30 v/ns i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, @125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 6 a 0.330 0.380 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward transconductance v ds =15 v , i d = 6a 10 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 1300 90 8 pf pf pf c oss eq (2) 2. c oss eq. is defined as a constant equi valent capacitance giving t he same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 520 v 150 pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 12 a, v gs = 10 v, (see figure 19) 45 7 25 nc nc nc
stb/f/i/p/w14nm65n electr ical characteristics 5/18 table 7. switching times symbol parameter test conditions min typ max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd =325 v, i d = 6 a r g =4.7 ? v gs = 10 v (see figure 18) 11 13 55 20 ns ns ns ns table 8. source drain diode symbol parameter test conditions min typ max unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 12 48 a a v sd (2) 2. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 12 a, v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 12 a, di/dt = 100 a/s v dd = 100 v (see figure 20) 390 5 25 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 12 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 20) 530 7 25 ns c a
electrical characteristics stb/f/i/p/w14nm65n 6/18 2.1 electrical characteristi cs (curves) figure 2. safe operating area for to-220 / d2pak / i2pak figure 3. thermal impedance for to-220 / d2pak / i2pak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp
stb/f/i/p/w14nm65n electr ical characteristics 7/18 figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 figure 8. output characteristics figure 9. transfer characteristics figure 10. transconductance figure 11. static drain-source on resistance
electrical characteristics stb/f/i/p/w14nm65n 8/18 figure 12. gate charge vs gate-source voltage figure 13. capacitance variations figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature
stb/f/i/p/w14nm6 5n test circuit 9/18 3 test circuit figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive wavefo rm figure 23. switching time waveform
package mechanical data stb/f/i/p/w14nm65n 10/18 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
stb/f/i/p/w14nm65n package mechanical data 11/18 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 9 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116
package mechanical data stb/f/i/p/w14nm65n 12/18 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
stb/f/i/p/w14nm65n package mechanical data 13/18 to-262 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 a1 2.40 2.72 0.0 9 4 0.107 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 9 0.70 0.01 9 0.027 c2 1.2 3 1. 3 2 0.04 8 0.052 d 8 . 9 5 9 . 3 50. 3 52 0. 3 6 8 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 e 10 10.40 0. 393 0.410 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l2 1.27 1.40 0.050 0.055
package mechanical data stb/f/i/p/w14nm65n 14/18 d2pak (to-263) mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 a1 0.0 3 0.2 3 0.001 0.00 9 b 0.70 0. 93 0.027 0.0 3 7 b 2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.2 3 1. 3 60.04 8 0.05 3 d 8 . 9 5 9 . 3 50. 3 52 0. 3 6 8 d1 7.50 0.2 9 5 e 10 10.40 0. 39 40.40 9 e1 8 .50 0. 33 4 e 2.54 0.1 e1 4. 88 5.2 8 0.1 9 20.20 8 h15 15. 8 50.5 9 00.624 j1 2.4 9 2.6 9 0.0 99 0.106 l2.2 9 2.7 9 0.0 9 0 0.110 l1 1.27 1.40 0.05 0.055 l2 1. 3 0 1.75 0.051 0.06 9 r 0.4 0.016 v2 0 8 0 8 0079457_m
stb/f/i/p/w14nm65n package mechanical data 15/18 dim. mm. min. typ max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
packaging mechanical data stb/f/i/p/w14nm65n 16/18 5 packaging mechanical data tape and reel shipment d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
stb/f/i/p/w14nm65n revision history 17/18 6 revision history table 9. document revision history date revision changes 15-feb-2008 1 first release 14-oct-2008 2 table 4: avalanche characteristics has been corrected.
stb/f/i/p/w14nm65n 18/18 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2008 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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